海外名师大讲堂（120）——Future Electronic Devices and where New Materials can help
来源：综合办 发布时间：2022-10-28 访问次数：161
题目：Future Electronic Devices and where New Materials can help
主讲人：John Robertson教授 剑桥大学 英国皇家科学院院士 英国皇家工程院院士
主持人：张睿 教授 浙江大学微纳电子学院
时间：2022年10月27日18:30-20:30
地点：腾讯会议（会议ID：320-421-778）
摘要：For many years, CMOS chips developed by the scaling down the dimensions but keeping rigidly to the same materials; Si as the semiconductor channel, SiO2 as the gate insulator and Al as the wiring. CMOS then entered an era where the materials set often varied to allow scaling to continue, such as using HfO2 as the gate insulator and Cu for wiring. However, not all these other materials made it successfully into chips, such as InGaAs and TMDs as the channel semiconductor. In all this, theory helps design new materials and hopefully speed up the development process. The trade-off between new materials and new designs continues.
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